sot323 npn silicon planar medium power transistors issue 2 ? february 1999 partmarking details ZUMT817-25 - t7 ZUMT817-40 - t23 complementary types ZUMT817-25 - zumt807-25 ZUMT817-40 - zumt807-40? t7 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 500 ma base current i b 100 ma peak base current i bm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo 0.1 5 a a v cb =20v, i e =0 v cb =20v, i e =0, t amb =150c emitter cut-off current i ebo 10 a v eb =5v, i c =0 collector-emitter saturation voltage v ce(sat) 700 mv i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.2 v i c =500ma, v ce =1v* static forward current transfer ratio h fe 100 40 600 i c =100ma, v ce =1v* i c =500ma, v ce =1v* -25 160 400 i c =100ma, v ce =1v* -40 250 600 i c =100ma, v ce =1v* transition frequency f t 200 mhz i c =10ma, v ce =5v f=35mhz collector-base capacitance c obo 5.0 pf i e =i e =0, v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 s. duty cycle 2% ZUMT817-25 ZUMT817-40
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